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DSF/FprEN 62047-9

Semiconductor devices - Micro-electromechanical devices -- Part 9: Wafer to wafer bonding strength measurement for MEMS

pending
Organization: DS
Status: pending
Page Count: 27
ICS Code (Semiconductor devices in general): 31.080.01
scope:

This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ìm to several millimeters.

Document History

October 3, 2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and...
DSF/FprEN 62047-9
Semiconductor devices - Micro-electromechanical devices -- Part 9: Wafer to wafer bonding strength measurement for MEMS
This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and...
Semiconductor devices - Micro-electromechanical devices -- Part 9: Wafer to wafer bonding strength measurement for MEMS
This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and...
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