DLA - MIL-S-19500/577
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 5 April 1989 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the detail requirements for silicon, high voltage, fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, US Army Laboratory Command, ATTN: SLCET-R-S, Fort Monmouth, NJ 07703-5302 by using the self-addressed Standardization Document Proposal (DD Form 1426) appearing at the end of this document or by letter
Document History
March 8, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, AXIAL LEAD, TYPES 1N6528 THROUGH 1N6535, JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as...
September 22, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, AXIAL LEAD, TYPES 1N6528 THROUGH 1N6535, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
May 24, 2016
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, High Voltage, Types 1N6528 through 1N6535, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
July 13, 2011
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, High Voltage, Types 1N6528 through 1N6535, JAN, JANTX, JANTXV, and JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
October 6, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
February 19, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
February 11, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 14, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 3, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, high voltage, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in...
MIL-S-19500/577
April 5, 1989
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS
This specification covers the detail requirements for silicon, high voltage, fast recovery semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each...