DLA - MIL-S-19500/500B
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 19 January 1993 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the detail requirements for 1500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500.
See figure 1.
Maximum ratings are as shown in columns 5 through 8 of table III herein, and as follows:
PPP = 1500 W (see figure 3) at tP = 1.0 ms.
PM(AV) = 1.0 W (derate at 6.67 mW/°C above TA = +25°C) (see 6.3).
IFSM = 200 A (pk) at tP = 8.3 ms (TA = +25°C).
−55°C ≤ TJ ≤ +175°C (ambient), −55°C ≤ TSTG ≤ +175°C (ambient).
Primary electrical characteristics are shown in columns 2 and 4 of table III herein.
Document History
November 16, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629 THROUGH 1N5665, JAN, JANTX, AND JANTXV
Scope.
This specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as...
September 15, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629 THROUGH 1N5665, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified...
September 12, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified...
March 24, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified...
November 5, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified...
April 14, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR UNIPOLAR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
April 6, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR UNIPOLAR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 8, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR UNIPOLAR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
February 12, 1996
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THRWGH 115558, 115907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
May 12, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/500B
January 19, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 1500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as...
November 27, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
October 3, 1983
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5907, 1N5629A THROUGH 1N5665A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 14, 1981
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A, JAN, JANTX, AND JANTXV
A description is not available for this item.
March 30, 1976
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR 1N5907, 1N5629 THROUGH 1N5665A, NON-TX, TX TXV
A description is not available for this item.
April 10, 1975
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR 1N5907, 1N5629A THROUGH 1N5665A, NON-TX, TX, TXV
A description is not available for this item.