NPFC - MIL-S-19500/102
Semiconductor Device, Transistors, NPN, Silicon, High Power Types 2N1016B, 2N1016C, and 2N1016D
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| Organization: | NPFC |
| Publication Date: | 6 July 2011 |
| Status: | inactive |
| Page Count: | 1 |
Document History
January 12, 2020
TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D, QUALITY LEVEL JAN
Scope.
This specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance (JAN) is provided for each device type.
August 23, 2013
SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D JAN
This specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance is provided for each device type.
MIL-S-19500/102
July 6, 2011
Semiconductor Device, Transistors, NPN, Silicon, High Power Types 2N1016B, 2N1016C, and 2N1016D
A description is not available for this item.
March 26, 2004
SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH POWER TYPES 2N1016B, 2N1016C, AND 2N1016D
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH POWER TYPES 2N1016B, 2N1016C, AND 2N1016D
A description is not available for this item.
December 29, 1966
SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH POWER TYPES 2N1016B, 2N1016C, AND 2N1016D
This specification covers the detail requirements for a high-power, NPN, silicon transistor.
See figure 1.
July 19, 1962
SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH POWER TYPES 2N1016B, 2N1016C, AND 2N1016D
A description is not available for this item.