NPFC - MIL-PRF-19500/659
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effect), Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
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| Organization: | NPFC |
| Publication Date: | 15 July 2011 |
| Status: | inactive |
| Page Count: | 1 |
Document History
February 26, 2019
Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
A description is not available for this item.
April 2, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
This specification covers the performance requirements for a P-Channel, radiation hardened, enhancement mode, MOSFET, power transistor. One level of product assurance is provided for each device type...
MIL-PRF-19500/659
July 15, 2011
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effect), Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
A description is not available for this item.
June 16, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECT), TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
A description is not available for this item.
August 20, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor....