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BSI - BS IEC 60747-9

Semiconductor devices Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

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Organization: BSI
Publication Date: 30 November 2019
Status: active
Page Count: 82
ICS Code (Transistors): 31.080.30
ICS Code (Semiconductor devices in general): 31.080.01

Document History

BS IEC 60747-9
November 30, 2019
Semiconductor devices Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
November 30, 2007
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
A description is not available for this item.
December 15, 1998
Surface Mounting Technology - Discrete Devices - Part 9: Insulated-Gate Bipolar Transistors (IGBTs)
A description is not available for this item.
December 15, 1998
Semiconductor devices Discrete devices Part 9: Insulated-gate bipolar transistors (IGBTs)
Product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods.
December 15, 1998
Surface Mounting Technology - Discrete Devices - Part 9: Insulated-Gate Bipolar Transistors (IGBTs)
A description is not available for this item.

References

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