NPFC - MIL-PRF-19500/760
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 27 January 2020 |
| Status: | inactive |
| Page Count: | 27 |
scope:
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to three radiation levels ("R", "F", and "G") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
October 2, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
MIL-PRF-19500/760
January 27, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
February 27, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 12, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
July 14, 2016
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
February 26, 2016
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7579U2, 2N7581U2, 2N7583U2, and 2N7585U2, JANTXVR, JANTXVF, JANSR, and JANSF
A description is not available for this item.
March 30, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7579U2, 2N7581U2, 2N7583U2, AND 2N7585U2, JANTXVR, JANTXVF, JANSR, AND JANSF
A description is not available for this item.