BSI - 20/30406234 DC
Draft BS IEC 63275-2 Ed.1.0 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2: Test method for bipolar degradation by body diode operating
pending, Most Current
| Organization: | BSI |
| Publication Date: | 1 April 2020 |
| Status: | pending |
| Page Count: | 11 |
| ICS Code (Transistors): | 31.080.30 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
Document History
20/30406234 DC
April 1, 2020
Draft BS IEC 63275-2 Ed.1.0 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2: Test method for bipolar degradation by body diode operating
A description is not available for this item.