DLA - DSCC-DWG-V62/21602
MICROCIRCUIT,LINEAR, MMIC, pHEMT 0.4 GHz TO 11 GHz LOW NOISE AMPLIFIER, GALLIUM ARSENIDE
active, Most Current
| Organization: | DLA |
| Publication Date: | 15 December 2020 |
| Status: | active |
| Page Count: | 13 |
scope:
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) 0.4 GHZ to 11 GHz low noise amplifier microcircuit, with an operating temperature range of -55°C to +125°C.
Document History
DSCC-DWG-V62/21602
December 15, 2020
MICROCIRCUIT,LINEAR, MMIC, pHEMT 0.4 GHz TO 11 GHz LOW NOISE AMPLIFIER, GALLIUM ARSENIDE
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor...