IEC 63229
Semiconductor devices – Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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| Organization: | IEC |
| Publication Date: | 1 April 2021 |
| Status: | active |
| Page Count: | 26 |
| ICS Code (Other semiconductor devices): | 31.080.99 |
scope:
This International Standard gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
Document History
IEC 63229
April 1, 2021
Semiconductor devices – Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
This International Standard gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples,...