DSF/PREN IEC 63275-2
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
pending, Most Current
| Organization: | DS |
| Status: | pending |
| Page Count: | 12 |
scope:
This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Document History
DSF/PREN IEC 63275-2
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due...