DSF/PREN IEC 63275-1
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
pending, Most Current
| Organization: | DS |
| Status: | pending |
| Page Count: | 16 |
scope:
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semicond
Document History
DSF/PREN IEC 63275-1
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room...