DLA - MIL-S-19500/230C VALID NOTICE 5
Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
active, Most Current
| Organization: | DLA |
| Publication Date: | 3 May 2021 |
| Status: | active |
| Page Count: | 1 |
Document History
MIL-S-19500/230C VALID NOTICE 5
May 3, 2021
Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
A description is not available for this item.
July 12, 2011
Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
August 29, 1988
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
September 12, 1968
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
February 12, 1965
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
This specification covers the detail requirements for silicon, high-conductance diodes, for use as thin-film or magnetic-core drivers.
May 11, 1964
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.
October 30, 1962
SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN-1N3207
A description is not available for this item.