DLA - MIL-PRF-19500/263B (2)
TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVELS JAN, JANTX, AND JANTXV
active, Most Current
| Organization: | DLA |
| Publication Date: | 14 May 2021 |
| Status: | active |
| Page Count: | 13 |
scope:
Scope.
This specification covers the performance requirements for NPN, silicon, transistors for relatively highpower applications. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for all encapsulated device type as specified in MIL-PRF-19500.
intended Use:
Transistors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/263B (2)
May 14, 2021
TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVELS JAN, JANTX, AND JANTXV
Scope.
This specification covers the performance requirements for NPN, silicon, transistors for relatively highpower applications. Three levels of product assurance (JAN, JANTX, and JANTXV) are...
January 19, 2016
TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVELS JAN, JANTX, AND JANTXV
This specification covers the performance requirements for NPN, silicon, transistors for relatively highpower applications. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for...
January 12, 2015
TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN
This specification covers the performance requirements for NPN, silicon, transistors for relatively highpower applications. One level of product assurance (JAN) is provided for all encapsulated...
July 13, 2011
Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, and 2N1717S
A description is not available for this item.
May 12, 2004
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S
A description is not available for this item.
June 30, 1999
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S
A description is not available for this item.
July 19, 1988
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S
A description is not available for this item.
May 5, 1980
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S
A description is not available for this item.
August 30, 1979
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S
A description is not available for this item.
January 12, 1967
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S
A description is not available for this item.
May 15, 1963
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714, 2N1714S, 2N1715, 2N1715S, 2N1716, 2N1716S, 2N1717, AND 2N1717S
This specification covers the detail requirements for silicon, NPN, transistors for relatively high-power circuit applications, and having the following particular, differential characterists at TA =...