scope:

This part of IEC TS 63202 specifies methods to detect and examine defects on bare crystalline silicon (c-Si) solar cells by means of electroluminescence (EL) imaging with the cell being placed in forward bias. It firstly provides guidelines for methods to capture electroluminescence images of non-encapsulated c-Si solar cells. In addition, it provides a list of defects which can be detected by EL imaging and provides information on the different possible methods to detect and differentiate such defects. When EL imaging alone cannot provide conclusive information for the presence of a type of defect, suggestions are also made to utilize a combination of other methods. Finally, this standard provides some information on potential effects when using cells with specific EL features in module assembly. Although this standard is mainly addressing bare c-Si solar cells, it is generally applicable to all wafer solar cell technologies.