NPFC - MIL-PRF-19500/124
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB TYPES 1N2970 THROUGH 1N2977, 1N2979, 1N2980, 1N2982, 1N2984 THROUGH 1N2986, 1N2988 THROUGH 1N2993, 1N2995, 1N2997, 1N2999 THROUGH 1N3005, 1N3007, 1N3008, 1N3009, 1N3011, 1N3012, 1N3014, 1N3015, PLUS A AND RA TYPES 1N3993 THROUGH 1N3998, JAN, JANTX, JANTXV, AND JANS
| Organization: | NPFC |
| Publication Date: | 20 June 1997 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the performance requirements for 10 watt, silicon, voltage regulator diodes: B type (standard polarity); RB type (reverse polarity). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
See figure 1 (D0-4).
Maximum ratings are as shown in columns 4, 8, and 10 of table III herein and as follows:
−65°C ≤ TJ ≤+175°C; PT = 10 W at TC = +55°C; derate at .083 W/°C above +55°C.
−65°C ≤ TSTG ≤ +200°C.
Primary electrical characteristics are as shown in columns 2, 9, 12, and 14 of table III herein, and as follows:
Thermal resistance (RθJC) = 12°C/W maximum. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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