DLA - MIL-PRF-19500/743C (2)
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
active, Most Current
| Organization: | DLA |
| Publication Date: | 12 July 2021 |
| Status: | active |
| Page Count: | 21 |
scope:
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each encapsulated device type (JANTXV and JANS) as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for unencapsulated devices, JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/743C (2)
July 12, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
September 18, 2017
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
January 28, 2015
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
April 22, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
October 24, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
May 15, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...