DLA - MIL-PRF-19500/643E
SEMICONDUCTOR DEVICE, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE CENTER TAP) TYPES 1N6766 AND 1N6767, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 8 December 2021 |
| Status: | inactive |
| Page Count: | 11 |
scope:
Scope.
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
September 23, 2022
SEMICONDUCTOR DEVICE, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE CENTER TAP) TYPES 1N6766 AND 1N6767, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance...
MIL-PRF-19500/643E
December 8, 2021
SEMICONDUCTOR DEVICE, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE CENTER TAP) TYPES 1N6766 AND 1N6767, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance...
May 27, 2020
SEMICONDUCTOR DEVICE, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE CENTER TAP) TYPES 1N6766 AND 1N6767, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance...
November 3, 2016
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6766 and 1N6767, 1N6766R and 1N6767R, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
February 3, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device...
August 24, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device...
August 4, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL. COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device...
October 24, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL. COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device...
July 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 THROUGH 1N6767 AND 1N6767R THROUGH 1N6767R JANTX, JANTXV, AND JANS
A description is not available for this item.
April 18, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 THROUGH 1N6767 AND 1N6767R THROUGH 1N6767R JANTX, JANTXV, and JANS
This specification covers the detail requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each device...