IEC - 63284
Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors
active, Most Current
| Organization: | IEC |
| Publication Date: | 1 April 2022 |
| Status: | active |
| Page Count: | 30 |
| ICS Code (Transistors): | 31.080.30 |
scope:
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.
Document History
63284
April 1, 2022
Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching,...