DS/IEC 63284
Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors
active, Most Current
| Organization: | DS |
| Publication Date: | 25 April 2022 |
| Status: | active |
| Page Count: | 18 |
scope:
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
Document History
DS/IEC 63284
April 25, 2022
Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching,...