DLA - MIL-PRF-19500/645F (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
active, Most Current
| Organization: | DLA |
| Publication Date: | 30 January 2023 |
| Status: | active |
| Page Count: | 12 |
scope:
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/645F (1)
January 30, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV,...
January 4, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV,...
September 11, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and...
October 31, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for each device...
August 24, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device...
October 24, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device...
June 27, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
August 16, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for each device...