DLA - MIL-PRF-19500/772A (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
active, Most Current
| Organization: | DLA |
| Publication Date: | 14 April 2023 |
| Status: | active |
| Page Count: | 20 |
scope:
Scope.
This specification covers the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power, unipolar silicon transient voltage suppressor diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/772A (1)
April 14, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power, unipolar silicon transient voltage suppressor diodes. Four levels of product...
August 6, 2019
Semiconductor Device, Diode Silicon, Unipolar Transient Voltage Suppresssor, Types 1N8036 through 1N8072, 1N8073 through 1N8109, 1N8110 through 1N8146, 1N8036US through 1N8072US, 1N8073US through 1N8109US, and 1N8110US through 1N8146US, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
July 15, 2014
SEMICONDUCTOR DEVICE, DIODE SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, 1N8036US THROUGH 1N8072US, 1N8073US THROUGH 1N8109US, AND 1N8110US THROUGH 1N8146US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power unipolar silicon transient voltage suppressor diodes. Four levels of product assurance...
April 17, 2013
SEMICONDUCTOR DEVICE, DIODE SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, 1N8036US THROUGH 1N8072US, 1N8073US THROUGH 1N8109US, AND 1N8110US THROUGH 1N8146US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power unipolar silicon transient voltage suppressor diodes. Four levels of product assurance...
April 17, 2013
SEMICONDUCTOR DEVICE, DIODE SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, 1N8036US THROUGH 1N8072US, 1N8073US THROUGH 1N8109US, AND 1N8110US THROUGH 1N8146US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power unipolar silicon transient voltage suppressor diodes. Four levels of product assurance...