DLA - MIL-PRF-19500/765B (2)
SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), TYPE 1N7072 AND 1N7078 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
active, Most Current
| Organization: | DLA |
| Publication Date: | 16 June 2023 |
| Status: | active |
| Page Count: | 18 |
scope:
Scope.
This specification covers the performance requirements for a silicon, dual Schottky, center-tap, power rectifier diode for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/765B (2)
June 16, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), TYPE 1N7072 AND 1N7078 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, dual Schottky, center-tap, power rectifier diode for use in high frequency switching power supplies and resonant power...
April 23, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), TYPE 1N7072, AND 1N7078 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, dual Schottky, center-tap, power rectifier diode for use in high frequency switching power supplies and resonant power...
March 14, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), TYPE 1N7072, AND 1N7078 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters....
March 18, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7072CCT3, AND 1N7078U3 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters....
March 23, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7072CCT3, AND 1N7078U3 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters....