DLA - SMD-5962-20202 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 1M X 16 BIT (16 M), 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 26 October 2023 |
| Status: | active |
| Page Count: | 31 |
Document History
SMD-5962-20202 REV A
October 26, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 1M X 16 BIT (16 M), 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
April 10, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 1M X 16 BIT (16 M), 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...