ASTM F84

Standard Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe

inactive
Buy Now
Organization: ASTM
Publication Date: 10 December 2002
Status: inactive
Page Count: 14
ICS Code (Semiconducting materials): 29.045
scope:

This test method covers the measurement of the resistivity of silicon wafers with a in-line four-point probe. The resistivity of a silicon crystal is an important materials acceptance requirement. This test method describes a procedure that will enable interlaboratory comparisons of the room temperature resistivity of silicon wafers. The precision that can be expected depends on both the resistivity of the wafer and on the homogeneity of the wafer. Round-robin tests have been conducted to establish the expected precision for measurements on p-type wafers with room temperature (23°C) resistivity between 0.0008 and 2000 Ω·cm and on n-type wafers with room-temperature (23°C) resistivity between 0.0008 and 6000 Ω·cm.

This test method is intended for use on single crystals of silicon in the form of circular wafers with a diameter greater than 16 mm (0.625 in.) and a thickness less than 1.6 mm (0.0625 in.). Geometrical correction factors required for these measurements are available in tabulated form.

This test method is to be used as a referee method for determining the resistivity of single crystal silicon wafers in preference to Test Methods F 43.

NOTE 1 - The test method is also applicable to other semiconductor materials but neither the appropriate conditions of measurement nor the expected precision have been experimentally determined. Other geometrics for which correction factors are not available can also be measured by this test method but only comparative measurements using similar geometrical conditions should be made in such situations.

NOTE 2 - DIN 50431 is a similar, but not equivalent, method for determining resistivity. It is equivalent to Test Methods F 43.

The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Document History

ASTM F84
December 10, 2002
Standard Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe
This test method covers the measurement of the resistivity of silicon wafers with a in-line four-point probe. The resistivity of a silicon crystal is an important materials acceptance requirement....
December 10, 1999
Standard Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
This test method 2 covers the measurement of the resistivity of silicon wafers with a in-line four-point probe. The resistivity of a silicon crystal is an important materials acceptance requirement....
May 10, 1998
Standard Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
A description is not available for this item.
June 10, 1997
Standard Test Method for Measuring Resistivity of Silicon Wafers with an in-Line Four-Point Probe
A description is not available for this item.
January 1, 1993
Standard Test Method for Measuring Resistivity of Silicon Wafers with an in-Line Four-Point Probe
A description is not available for this item.
October 31, 1988
STANDARD TEST METHOD FOR MEASURING RESISTIVITY OF SILICON SLICES WITH A COLLINEAR FOUR-PROBE ARRAY (E1-1992)
A description is not available for this item.
May 25, 1984
STANDARD METHOD FOR MEASURING RESISTIVITY OF SILICON SLICES WITH A COLLINEAR FOUR-PROBE ARRAY
A description is not available for this item.

References

Advertisement