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DLA - DSCC-VID-V62/12617 REV A

MICROCIRCUIT, DIGITAL, LOW CAPACITANCE, LOW CHARGE INJECTION, ±15 V/+12 V iCMOS QUAD SPST SWITCHES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 September 2012
Status: inactive
Page Count: 13
scope:

This drawing documents the general requirements of a high performance low capacitance, low charge injection, ±15 V/+12 V iCMOS quad SPST switches microcircuit, with an operating temperature range of -55°C to +125°C.

Document History

June 15, 2023
MICROCIRCUIT, DIGITAL, LOW CAPACITANCE, LOW CHARGE INJECTION, ±15 V / +12 V iCMOS QUAD SPST SWITCHES, MONOLITHIC SILICON
Scope. This drawing documents the general requirements of a high performance low capacitance, low charge injection, ±15 V / +12 V industrial complementary metal oxide semiconductor (iCMOS) quad...
March 8, 2018
MICROCIRCUIT, DIGITAL, LOW CAPACITANCE, LOW CHARGE INJECTION, ±15 V/+12 V iCMOS QUAD SPST SWITCHES, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance low capacitance, low charge injection, ±15 V/+12 V iCMOS quad SPST switches microcircuit, with an operating temperature range of...
DSCC-VID-V62/12617 REV A
September 20, 2012
MICROCIRCUIT, DIGITAL, LOW CAPACITANCE, LOW CHARGE INJECTION, ±15 V/+12 V iCMOS QUAD SPST SWITCHES, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance low capacitance, low charge injection, ±15 V/+12 V iCMOS quad SPST switches microcircuit, with an operating temperature range of...
April 9, 2012
MICROCIRCUIT, DIGITAL, LOW CAPACITANCE, LOW CHARGE INJECTION, ±15 V/+12 V iCMOS QUAD SPST SWITCHES, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance low capacitance, low charge injection, ±15 V/+12 V iCMOS quad SPST switches microcircuit, with an operating temperature range of...

References

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