NPFC - MIL-PRF-19500/663
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
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| Organization: | NPFC |
| Publication Date: | 23 February 2013 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
August 23, 2022
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels...
July 14, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 21, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
MIL-PRF-19500/663
February 23, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
June 27, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
April 21, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
December 10, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
November 5, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
March 19, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7431, 2N7432, AND 2N7433 JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
A description is not available for this item.
June 12, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7431, 2N7432, AND 2N7433 JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...