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NPFC - MIL-PRF-19500/747

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED, SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH

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Organization: NPFC
Publication Date: 19 April 2013
Status: active
Page Count: 17
scope:

This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).

intended Use:

Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED, SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
A description is not available for this item.
February 2, 2018
Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened, Silicon, Type 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, and JANSH
A description is not available for this item.
MIL-PRF-19500/747
April 19, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED, SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, transistor. Two levels of product assurance are provided for each device type as...
August 12, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), transistor. Two levels of product...
August 12, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), transistor. Two levels of product...

References

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