NPFC - MIL-PRF-19500/703
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
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| Organization: | NPFC |
| Publication Date: | 26 February 2014 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
May 30, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7479, 2N7480, AND 2N7481, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are...
July 8, 2016
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7479, 2N7480, AND 2N7481, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
September 1, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
MIL-PRF-19500/703
February 26, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
August 30, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
July 2, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 16, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7479U3, 2N7480U3 AND 2N7481U3 JANTXVR, F, G AND H AND JANSR, F, G AND H
A description is not available for this item.
December 6, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7479U3, 2N7480U3 AND 2N7481U3 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event Effects (SEE)), power transistor. Two levels of...