scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 HFA3127 Ultra high frequency all NPN transistor array

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual in line

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Collector to emitter voltage (open base) - - - - - - - - - - - - - - - - - - - - - - +8 V dc Collector to base voltage (shorted base) - - - - - - - - - - - - - - - - - - - - - - +12 V dc Emitter to base voltage (reversed bias) - - - - - - - - - - - - - - - - - - - - - - +5.5 V dc Collector current at 100% duty cycle, 175°C T_J - - - - - - - - - - - - - - - - - - - 11.3 mA Junction temperature (T_J) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - +175°C Storage temperature - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - −65°C ≤ T_A ≤ +150°C Lead temperature (soldering 10 sec) - - - - - - - - - - - - - - - - - - - - - - - - +300°C Thermal resistance, junction to case (θ_JC) - - - - - - - - - - - - - - - - - - - - - 24°C/W Thermal resistance, junction to ambient (θ_JA) - - - - - - - - - - - - - - - - - - - - 80°C/W Power dissipation (P_D) 2/ - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1.33 W

Ambient operating temperature range - - - - - - - - - - - - - - - - - - - - - - - - −55°C ≤ T_A ≤ +125°C

intended Use: