DIN EN 62047-26
Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures (IEC 47F/178/CD:2013)
inactive, Most Current
| Organization: | DIN |
| Publication Date: | 1 May 2014 |
| Status: | inactive |
| Page Count: | 53 |
| ICS Code (Electromechanical components in general): | 31.220.01 |
| ICS Code (Semiconductor devices in general): | 31.080.01 |
scope:
This part of IEC 62047 specifies terms and definition, description of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 μm to 100 μm; walls and trenches with respective widths of 5 μm to 150 μm; and aspect ratio of 0,0067 to 20. For needle structures, the standard applies to structures with a height, horizontal width and vertical width of 2 μm or larger, and with dimensions that fit inside a cube with sides of 100 μm.
This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.
Document History
DIN EN 62047-26
May 1, 2014
Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures (IEC 47F/178/CD:2013)
This part of IEC 62047 specifies terms and definition, description of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of...