DLA - SMD-5962-87598
MICROCIRCUIT, LINEAR, HIGH CURRENT NPN, TRANSISTOR ARRAY, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 5 January 1988 |
| Status: | inactive |
| Page Count: | 8 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit function 01 3183A High current NPN transistor array
The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package
Collector current- - - - - - - - - - - - - - - - - - 100 mA Base current - - - - - - - - - - - - - - - - - - - - 20 mA Power dissipation (PD): Any one transistor - - - - - - - - - - - - - - - - 500 mW Total package- - - - - - - - - - - - - - - - - - - 750 mW 1/ Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC) Case E - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +175°C
Ambient operating temperature range (TA) - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
Document History
