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NPFC - MIL-M-38510/221

MICROCIRCUITS, DIGITAL, 16,384 BIT MOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 14 November 1983
Status: inactive
Page Count: 21
scope:

This specification covers the detail requirements for monolithic silicon, N-channel MOS erasable programmable read-only memory microcircuits which employ the ultraviolet light erasing technique. One product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be as specified in MIL-M-38510, except the "JAN" or "J" certification shall not be used.

The device type shall be as follows:

Device type Circuit 01 2048 × 8-bit EPROM

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) J D-3 (24-lead, ½" × 1-¼"), dual-in-line package 1/

Supply voltage, VCC 2/ - - - - - - - - - - - - −0.3 V to 6.0 V All input or output voltages 2/- - - - - - - - −0.3 V to 6.0 V Program input, VPP - - - - - - - - - - - - - - −0.3 V to 26.5 V Operating case temperature range 3/- - - - - - −55°C to +125°C Storage temperature range- - - - - - - - - - - −65°C to +125°C Lead temperature (soldering, 10 seconds) - - - +300°C Thermal resistance, junction-to-case (θJC) - - 30°C/W Maximum power dissipation, (PD) per device Programming- - - - - - - - - - - - - - - - - 1.88 W Operating- - - - - - - - - - - - - - - - - - 1.0 W Junction temperature (TJ)- - - - - - - - - - - +160°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage VCC - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Minimum high level input voltage, VIH- - - - - 2.0 V dc to VCC +1 Maximum low level input voltage, VIL - - - - - −0.1 V dc to 0.80 V dc High level program input voltage, VIH(PR)- - - 24 V to 26 V Case operating temperature range (TC)- - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

April 11, 2012
Microcircuits, Digital, 16,384 Bit MOS, Ultraviolet Erasable Programmable Read-Only Memory (EPROM), Monolithic Silicon
A description is not available for this item.
April 24, 2001
MICROCIRCUITS, DIGITAL, 16,384 BIT MOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON
A description is not available for this item.
MICROCIRCUITS, DIGITAL, 16,384 BIT MOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUITS, DIGITAL, 16,384 BIT MOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON
A description is not available for this item.
April 14, 1989
MICROCIRCUITS, DIGITAL, 16,384 BIT MOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/221
November 14, 1983
MICROCIRCUITS, DIGITAL, 16,384 BIT MOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, N-channel MOS erasable programmable read-only memory microcircuits which employ the ultraviolet light erasing technique. One...
October 10, 1980
MICROCIRCUITS, DIGITAL, 16,384 BIT MOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EPROM), MONOLITHIC SILICON
A description is not available for this item.

References

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