UNLIMITED FREE ACCESS TO THE WORLD'S BEST IDEAS

close
Already an Engineering360 user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your Engineering360 Experience

close
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

ASTM F996

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

inactive
Buy Now
Organization: ASTM
Publication Date: 1 January 1992
Status: inactive
Page Count: 6
ICS Code (Transistors): 31.080.30

Document History

January 1, 2011
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxidesemiconductor- field-effect...
January 1, 2011
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect...
May 1, 2010
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect...
May 10, 1998
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
1. Scope 1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a...
May 10, 1998
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect...
ASTM F996
January 1, 1992
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
A description is not available for this item.
February 22, 1991
STANDARD TEST METHOD FOR SEPARATING A TOTAL-DOSE- INDUCED MOSFET THRESHOLD VOLTAGE SHIFT INTO COMPONENTS DUE TO OXIDE TRAPPED HOLES AND INTERFACE STATES USING THE SUBTHRESHOLD TECHNIQUE
A description is not available for this item.
Advertisement