scope:

This specification covers the detail requirements for bulk silicon and silicon on sapphire (SOS), static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit Access time 01 (bulk silicon) 4096×l bit RAM 120 ns 02 (bulk silicon) 1024×4 bit RAM 120 ns 03 (synchronous; bulk silicon) 4096×l bit RAM 320 ns 04 (synchronous; bulk silicon) 1024×4 bit RAM 320 ns 05 (asynchronous; SOS) 4096×l bit RAM 250 ns 06 (asynchronous; SOS) 1024×4 bit RAM 250 ns

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) V D-6 (18-lead, ¼" × 15/16"), dual-in-line package K F-6A (24-lead, ⅜"× ⅝"), flat package

Radiation hardness levels shall be as defined in MIL-M-38510.

Absolute maximum ratings. Device types 01, 02, 03, 04 Device types 05, 06 Supply voltage range (V_DD - V_SS) −0.3 V to +7.0 V −0.5 V to +7.0 V Input voltage range V_SS −0.3 V to V_DD +0.3 V V_SS −0.5 V to V_DD +0.5 V Input current, any one input 10 mA Storage temperature range −65°C to +150°C −65°C to +150°C Maximum power dissipation 200 mW 500 mW MPD per output transistor 100 mW Lead temperature (soldering) 300°C 300°C 10 seconds maximum Thermal resistance 0.04°C/mW junction to case Junction temperature 175°C 175°C Radiation level As indicated by RHA level designator

Recommended operating conditions. Device types 01, 02, 03, 04 Device types 05, 06 Supply voltage (V_DD - V_SS) 4.5 V to 5.5 V 4.75 V to 5.25 V Input low (V_IL) voltage range V_SS −0.3 V to V_SS +0.8 V V_SS +0.8 V maximum Input high (V_IH) voltage range V_DD −2.0 V to V_DD +0.3 V V_DD/2 minimum Case operating temperature range −55°C to + 125°C −55°C to +125°C Timing parameters (See figure 7) (See figure 7)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RADC (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.