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DOD - SMD 5962-86859

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 22 October 1991
Status: inactive
Page Count: 26
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 85 ns 02 85 ns 03 70 ns 04 70 ns 05 55 ns 06 55 ns 07 45 ns 08 45 ns 09 35 ns 10 35 ns 11 See 6.4 16K × 4 Static Ram 70 ns 12 70 ns 13 55 ns 14 55 ns 15 45 ns 16 45 ns 17 35 ns 18 35 ns 19 55 ns 20 55 ns 21 45 ns 22 45 ns 23 35 ns 24 35 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package T Figure 1 (22-lead, 1.260" × .310" × .140"), dual-in-line package U C-11A (28-terminal, .560" × .358" × .075"), leadless chip carrier package W D-7 (22-lead, 1.111" × .410" × .225"), dual-in-line package X C-11 (28-terminal, .560" × .358" × ,l20") leadless chip carrier package Y Figure 1 (22-lead, 1.110" × .310" × .175"), dual-in-line package Z Figure 1 (22-terminal, .490" × .290" × .080"), leadless chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc 1/ DC output current - - - - - - - - - - - - - - - - - - 20 mA Ambient storage temperature - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - −55°C to +125°C Thermal resistance, junction-to-case (ΘJC): Cases K, L, U, W, and X - - - - - - - - - - - - - - See MIL-M-38510, appendix C Cases Y and T - - - - - - - - - - - - - - - - - - - 28° C/W 2/ Case Z - - - - - - - - - - - - - - - - - - - - - - 22°C/W 2/ Power dissipation - - - - - - - - - - - - - - - - - - 1.0 W

Supply voltage (VCC) - - - - - - - - - - - - - - - - +4.5 dc to +5.5 V dc 1/ Ground voltage (VSS) - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - +2.2 V dc to VCC +0.5 V dc Input low voltage (VIL) - - - - - - - - - - - - - - −0.5 V dc to .8 V dc 3/ Operating case temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

February 18, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
February 17, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 21, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-86859
October 22, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 20, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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