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DLA - SMD-5962-90925 REV A

MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 7 June 1993
Status: inactive
Page Count: 18
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, ard M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PTN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 CLC500 High speed output creeping operational amplifier

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

For device classes M, B, and S, case outline(s) shall meet the requirements in appendix C of MIL-I-38510 and as listed below. For device classes Q and V, case outline(s) shall meet the requirements of MIL-I-38535, appendix C of MIL-M-38510, and as listed below.

Outline Letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage (VS) - - - - - - - - - - - - - - - - ±7 V dc Output current (IOUT) - - - - - - - - - - - - - - - 70 mA Power dissipation (PD) - - - - - - - - - - - - - - 230 mW Junction temperature (TJ) - - - - - - - - - - - - - +175°C Ambient operating temperature range (TA) - - - - - −55°C to +125°C Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - +300°C Thermal resistance, junction-to-ambient (ΘJA) - - - 75°C/W Thermal resistance, junction-to-case (ΘJC) - - - - See MIL-M-38510, appendix C

Supply voltage (VS) - - - - - - - - - - - - - - - - ±5 V dc Gain range (AV) - - - - - - - - - - - - - - - - - - ±1 to ±10 Ambient operating temperature range (TA) - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

January 25, 2010
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-90925 REV A
June 7, 1993
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, ard M) and...
January 21, 1992
MICROCIRCUIT, LINEAR, HIGH SPEED, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.

References

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