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ASTM F108

STANDARD TEST METHOD FOR RESISTIVITY OF SILICON EPITAXIAL LAYERS BY THE THREE-PROBE VOLTAGE BREAKDOWN METHOD

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Organization: ASTM
Publication Date: 27 January 1984
Status: inactive
Page Count: 9

Document History

October 31, 1988
STANDARD TEST METHOD FOR RESISTIVITY OF SILICON EPITAXIAL LAYERS BY THE THREE-PROBE VOLTAGE BREAKDOWN METHOD
A description is not available for this item.
ASTM F108
January 27, 1984
STANDARD TEST METHOD FOR RESISTIVITY OF SILICON EPITAXIAL LAYERS BY THE THREE-PROBE VOLTAGE BREAKDOWN METHOD
A description is not available for this item.
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