NPFC - MIL-PRF-19500/627
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6688, 1N6689, 1N6688US, 1N6689US JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 23 July 2014 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
October 29, 2019
DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6688 AND 1N6689, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance (JANTX, JANTXV, and JANS) are...
May 6, 2019
Semiconductor Device, Diode, Silicon, Ultra-Fast Recovery, Power Rectifier, 1N6688, 1N6689, 1N6688US, 1N6689US JANTX, JANTXV, and JANS
A description is not available for this item.
MIL-PRF-19500/627
July 23, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6688, 1N6689, 1N6688US, 1N6689US JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as...
August 24, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6688, 1N6689, 1N6688US, 1N6689US JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as...
July 15, 2011
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6688, 1N6689, 1N6688US, and 1N6689US, JANTX, JANTXV, and JANS
A description is not available for this item.
November 22, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6688, 1N6689, 1N6688US, AND 1N6689US, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 25, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6688, N6689, 1N6688US, AND 1N6689US, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, hyper fast power rectifier diodes. Three levels of product assurance are provided for each device type as specified in...
November 18, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6688, N6689, 1N6688US, AND 1N6689US, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for silicon, hyper fast power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See...