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NPFC - MIL-S-19500/430

SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV

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Organization: NPFC
Publication Date: 3 September 1993
Status: inactive
Page Count: 11
scope:

This specification covers the detail requirements for two electrically isolated, matched N-channel, junction, silicon field-effect transistors in one package. Two levels of product assurance are provided for each device type as specified in MIL-S-19500.

See figure 1 (TO-71).

TA = +25°C, unless otherwise specified.

TC = +25°C, unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Document History

April 27, 2022
TRANSISTORs, DUAL FIELD EFFECT, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
Scope. This specification covers the performance requirements for two electrically isolated, matched N-channel, junction, silicon field-effect transistors in one package. Three levels of product...
April 15, 2017
TRANSISTORS, DUAL FIELD EFFECT, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for two electrically isolated, matched Nchannel, junction, silicon field-effect transistors in one package. Three levels of product assurance...
May 24, 2016
SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
A description is not available for this item.
August 18, 2011
SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
A description is not available for this item.
November 24, 2008
Semiconductor Device, Dual Field Effect Transistors, N-Channel, Silicon Types 2N5545, 2N5546, and 2N5547, JAN, JANTX, and JANTXV
A description is not available for this item.
December 19, 2003
SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
A description is not available for this item.
July 30, 1999
SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
This specification covers the performance requirements for two electrically isolated, matched N-channel, junction, silicon field-effect transistors in one package. Three levels of product assurance...
March 21, 1994
SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
A description is not available for this item.
MIL-S-19500/430
September 3, 1993
SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
This specification covers the detail requirements for two electrically isolated, matched N-channel, junction, silicon field-effect transistors in one package. Two levels of product assurance are...
June 1, 1973
SEMICONDUCTOR DEVICE, UNITIZED, DUAL-FIELD-EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES TX AND NON-TX 2N5545, 2N5546, AND 2N5547
A description is not available for this item.
March 1, 2006
SEMICONDUCTOR DEVICE, UNITIZED, DUAL-FIELD-EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES TX AND NON-TX 2N5545, 2N5546, AND 2N5547
A description is not available for this item.

References

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