NPFC - MIL-S-19500/530
SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
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| Organization: | NPFC |
| Publication Date: | 1 March 1979 |
| Status: | active |
| Page Count: | 14 |
scope:
This specification covers the detail requirements for PNP, Silicon, Plastic encapsulated transistor, designed for general switching and amplifier applications.
See Figure 1 herein.
(At TA = +25°C, unless otherwise specified).
(At TA = +25°C). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, US Army Electronics Command,ATTN: DRSEL-RD-TS-S, Fort Monmouth, NJ 07703, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
May 3, 2021
Semiconductor Device, Transistor, Silicon Type 2N3906
A description is not available for this item.
July 12, 2011
Semiconductor Device, Transistor, Silicon Type 2N3906
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
A description is not available for this item.
July 6, 1990
SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
A description is not available for this item.
MIL-S-19500/530
March 1, 1979
SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
This specification covers the detail requirements for PNP, Silicon, Plastic encapsulated transistor, designed for general switching and amplifier applications.
See Figure 1 herein.
(At TA = +25°C,...