scope:

This drawing describes device requirements for, digital, bipolar, advanced low power Schottky TTL, NAND gates, monolithic silicon, class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54ALS00A Quadruple, two-input positive NAND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline D F-2 (14-lead, ¼" × ⅜"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - −0.5 V dc minimum to +7.0 V dc maximum Input voltage range - - - - - - - - - - - - - −1.5 V dc at −18 mA to 7.0 V dc Storage temperature - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (P_D) per device- - - 16.5 mW 1/ Lead temperature (soldering, 10 seconds) - - - +300°C Thermal resistance, junction-to-case (θ_JC): Cases D and 2- - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (T_J) - - - - - - - - - - +175°C

Supply voltage (V_CC) - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (V_IH) - - - - - 2.0 V dc Maximum low level input voltage (V_IL): T_C = +125°C- - - - - - - - - - - - - - - - - - 0.7 V dc T_C = −55°C- - - - - - - - - - - - - - - - - - 0.8 V dc T_C = +25°C- - - - - - - - - - - - - - - - - - 0.8 V dc Case operating temperature range (T_C)- - - - - - −55°C to +125°C

intended Use: