DLA - MIL-S-19500/478F
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N5812, 1N5814, 1N5816, AND R VERSIONS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
| Organization: | DLA |
| Publication Date: | 3 March 1995 |
| Status: | inactive |
| Page Count: | 15 |
scope:
This specification covers the detail requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two product assurance levels are provided for die.
See 3.3 (D0-4 and unencapsulated die).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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