NPFC - MIL-S-19500/434
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 17 November 1992 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the detail requirements for 1500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500.
See figure 1.
Maximum ratings are as shown in columns 5 through 8 of table III herein, and as follows:
PPP = 1500 W (see figure 3) at tP = 1.0 ms.
PM(AV) = 3.0 W (derate at 20 mW/°C above TA = + 25°C) (see 6.3).
IFSM = 150 A (pk) at tP = 8.33 ms (TA = + 25°C).
−55°C ≤ TOP ≤ + 175°C (ambient), −55°C ≤ TSTG ≤ +175°C (ambient).
Primary electrical characteristics are shown in columns 2 and 4 of table III herein.
Document History
April 14, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5610 THROUGH 1N5613, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance (JAN, JANTX, JANTXV,...
March 2, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5610 THROUGH 1N5613, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
August 15, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5610 THROUGH 1N5613, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
September 1, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5610 THROUGH 1N5613, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
March 24, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5610 THROUGH 1N5613, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
September 13, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5610 THROUGH 1N5613, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
May 18, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5610 THROUGH 1N5613, JAN, JANTX, JANTXV, AND JAN
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
December 19, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
August 6, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 1500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
November 23, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 26, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUH 1N5613 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-S-19500/434
November 17, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 1500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device as...
March 5, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THROUGH 1N5558 AND 1N5610 THROUGH 1 JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
September 1, 1981
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555 THROUGH 1N5558 AND 1N5610 THROUGH 1N5613 JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
March 2, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT SUPPRESSOR TX AND NON-TX TYPES 1N5555 THROUGH 1N5558 AND 1N5610 THROUGH 1N5613
A description is not available for this item.
October 13, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT SUPPRESSOR TX AND NON-TX TYPES 1N5555 THROUGH 1N5558 AND 1N5610 THROUGH 1N5613
A description is not available for this item.
June 23, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT SUPPRESSOR TX AND NON-TX TYPES 1N5555 THROUGH 1N5558 AND 1N5610 THROUGH 1N5613
A description is not available for this item.
February 27, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT SUPPRESSOR TX AND NON-TX TYPES 1N5555 THROUGH 1N5558 AND 1N5610 THROUGH 1N5613
A description is not available for this item.