NPFC - MIL-S-19500/477
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS AND JANC
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| Organization: | NPFC |
| Publication Date: | 25 January 1993 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the detail requirements for silicon, fast recovery, power rectifier diodes. Five levels of product assurance are provided for each device type as specified in MIL-5-19500.
See figures 2, 3, 4, and 5.
TA = +25°C, unless otherwise specified.
TSTG = −65°C to +200°C
Top = −65°C to +175°C
TJ(max) = +175°C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-EC, 1507 Wilmington Pike, Dayton, OH 45444-5270, by using Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
TA = +25°C, unless otherwise specified.
Document History
December 9, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST RECOVERY, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, ultrafast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
June 28, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST RECOVERY, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, ultrafast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
December 16, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for...
September 1, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
September 22, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
May 23, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
July 9, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, 1N5802URS, 1N5804URS, 1N5806URS, 1N5807URS, 1N5809URS, AND 1N5811URS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as...
January 28, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, 1N5802URS, 1N5804URS, 1N5806URS, 1N5807URS, 1N5809URS, AND 1N5811URS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as...
November 14, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, 1N5802URS, 1N5804URS, 1N5806URS, 1N5807URS, 1N5809URS, AND 1N5811URS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as...
June 22, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as...
October 2, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as...
March 22, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as...
June 7, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as...
December 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Five levels of product assurance are provided for each device type as specified in...
April 8, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
A description is not available for this item.
October 18, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Five levels of product assurance are provided for each device type as specified in...
November 30, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
A description is not available for this item.
June 23, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 17, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
A description is not available for this item.
January 13, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Five levels of product assurance are provided for each device type as specified in...
July 20, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS AND JANKC
A description is not available for this item.
April 7, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS AND JANKC
A description is not available for this item.
MIL-S-19500/477
January 25, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANS AND JANC
This specification covers the detail requirements for silicon, fast recovery, power rectifier diodes. Five levels of product assurance are provided for each device type as specified in MIL-5-19500....
June 15, 1987
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
April 11, 1986
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.