NPFC - MIL-S-19500/609
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US JANTX, JANTXV, AND JANS
| Organization: | NPFC |
| Publication Date: | 4 August 1994 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This specification covers the detail requirements for controlled forward voltage switching diodes suitable for high stress applications where silver bump construction may be indicated (see 6.3). Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (similar to D0-35) and figure 2 (D-5D).
TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ELD, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, primary electrical characteristics at TA = +25°C.
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