UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-88634 REV D

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 August 1993
Status: inactive
Page Count: 26
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device Generic Circuit Access Write type number function time speed Write mode End of write indicator Endurance 01 See 6.6 32K × 8 EEPROM 120 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling/toggle bit 10,000 cycles 02 See 6.6 32K × 8 EEPROM 120 ns 3 ms byte/page [D bar][A bar][T bar][A bar] polling/toggle bit 10,000 cycles 03 See 6.6 32K × 8 EEPROM 90 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling/toggle bit 10,000 cycles 04 See 6.6 32K × 8 EEPROM 90 ns 3 ms byte/page [D bar][A bar][T bar][A bar] polling/toggle bit 10,000 cycles 05 See 6.6 32K × 8 EEPROM 70 ns 10 ms byte/page [D bar][A bar][T bar][A bar] polling/toggle bit 10,000 cycles

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Packaging style U See figure 1 28 Pin grid array X GDIP1-T28 or CDIP2-T28 28 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z CDFP4-F28 28 Flat pack

Supply voltage range (VCC) . . . . . . . . . . . . . . . . −0.3 V dc to +6.25 V dc Storage temperature range . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds). . . . . . . . . . +300°C Junction temperature (TJ) 2/ . . . . . . . . . . . . . . . +175°c Thermal resistance, junction-to-case (ΘJC). . . . . . . . . See MIL-STD-1835 Input voltage range (VIL, VIH) . . . . . . . . . . . . . . −0.3 V dc to +6.25 V dc Data retention . . . . . . . . . . . . . . . . . . . . . . 10 years (minimum) Endurance . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 cycles (minimum) Chip clear voltage (Vh) . . . . . . . . . . . . . . . . . . 13.0 V dc

Supply voltage range (VCC) . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Case operating temperature range (TC) . . . . . . . . . . . −55°C to +125°C Input voltage, low range (VIL) . . . . . . . . . . . . . . −0.1 V dc to +0.8 V dc Input voltage, high range (VIH) . . . . . . . . . . . . . . +2.0 V dc to VCC + 0.3 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 24, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K x 8 EEPROM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
October 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS,32K x 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
March 29, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K x 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
August 7, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88634 REV D
August 20, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 18, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.
January 27, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.
January 26, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.
February 13, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.
Advertisement