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DLA - SMD-5962-88545 REV A

MICROCIRCUITS, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 June 1992
Status: inactive
Page Count: 22
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.4) 64K × 4 low power CMOS SRAM 35 ns 02 (See 6.4) 64K × 4 low power CMOS SRAM 44 ns 03 (See 6.4) 64K × 4 low power CMOS SRAM 55 ns 04 (See 6.4) 64K × 4 low power CMOS SRAM 70 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-11 (28-terminal, .560" × .358" × .120"), rectangular chip carrier package

Voltage on any input relative to VSS - - - - - - - - - - −0.5 V dc to +7.0 V dc Voltage applied to outputs - - - - - - - - - - - - - - - −0.50 V dc to +6.0 V dc Storage temperature range- - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases L and X- - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - - +150°C 1/

Supply voltage (VCC) - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage (VSS) - - - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - - - 2.2 V dc to VCC +0.5 V dc Input low voltage (VIL)- - - - - - - - - - - - - - - - - −0.50 V dc to +0.8 V dc 2/ Case operating temperature range (TC)- - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 4, 2022
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
September 9, 2015
MICROCIRCUITS, MEMORY, DIGITAL, CMOS,64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
February 28, 2007
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 4, 2001
MICROCIRCUITS, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88545 REV A
June 22, 1992
MICROCIRCUITS, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 4, 1988
MICROCIRCUITS, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON
A description is not available for this item.
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