DLA - SMD-5962-86052 REV A
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR 256 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 8 June 1987 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit function 01 8×350 2048-bit bipolar RAM
The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline W D-7 (22-lead, ⅜" × 1 ⅛"), dual-in-line package 3 C-4 (28-terminal, .450" × .450"), square chip carrier package
Supply voltage - - - - - - - - - - - - - - - - - +7 V dc maximum Input voltage- - - - - - - - - - - - - - - - - - +5.5 V dc maximum Storage temperature range- - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - 1.05 W 1/ Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - +200°C
Supply voltage range (VCC) - - - - - - - - - - - +4.75 V dc to +5.25 V dc Case operating temperature range (TC)- - - - - - −55°C to +125°C Minimum high level input voltage - - - - - - - - 2.0 V dc Maximum high level input voltage - - - - - - - - 0.8 V dc
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
Document History
