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DLA - SMD-5962-89469 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 12 May 1993
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identity the circuit function as follows:

Device type Generic number 1/ Circuit function Propagation delay 01 2100 gate UV EPLD 45 ns

The case outlines shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GQCC1-J68 68 "J" lead chip carrier package 2/ Y CMGA15-PN 68 Pin grid array package 2/ 3/

The lead finish shall be as specified in MIL-M-38510. finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC Input voltage range - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Maximum power dissipation - - - - - - - - - - - - 2 W 5/ Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (θJC): Case outlines X and Y - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - - −65°C to +150°C Temperature under bias range - - - - - - - - - - −55°C to +125°C Endurance - - - - - - - - - - - - - - - - - - - - 25 erase/write cycles (minimum) Data retention - - - - - - - - - - - - - - - - - 10 years (minimum)

Supply voltage range (VCC) - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - 2.0 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function ape not available for... View More

Document History

February 23, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
July 11, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89469 REV A
May 12, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
March 25, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
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